Nanostructured Zinc Selenide (ZnSe) Thin Films Deposited by Various Modes of Electrodeposition for Photovoltaic Application

Satish P. Gupta1,2

Poonam P. Sanap2,3

Ganesh V Dilwale4

Ravindra N. Bulakhe5,Email

Ajay D. Jagadale6

Madhav K. Deore2

Anuradha B. Bhalerao7,Email

Chandrakant D. Lokhande8,Email

1Department of Physics, HPT Arts and RYK Science College Nashik-05, India.
2Department of Physics, K. T. H. M. College, Nashik-422002 (M. S.), India.
3Basic Engineering Science Department, Guru Gobind Singh College of Engineering & Research Centre, Nashik- 422009, India.
4Department of Physics, RNC Arts, JDB Commerce and NSC Science College, Nashik Road-422101, India.
5Department of Chemistry, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
6Department of Electrical and Electronics Engineering, School of Electrical and Electronics Engineering, SASTRA Deemed University, Thanjavur 613001, India.
7Department of Applied Science, K. K. Wagh Institute of Engineering Education & Research, Nasik, 422003, India.

8D. Y. Patil University, Kasaba Bawada, Kolhapur, 416006, India

Abstract

Nanostructured zinc selenide (ZnSe) thin films were deposited from solutions containing zinc sulphate, selenium dioxide by galvanostatic (GS), potentiostatic (PS) and potentiodynamic (PD) modes of electrodeposition technique onto FTO coated glass substrates at 300 K. The films have been characterized by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), optical absorbance and photoelectrochemical (PEC) cell. XRD study depicts nanocrystalline hexagonal crystal structure of deposited thin film by GS and PS mode, while amorphous nature by PD mode. The surface morphology studied by scanning electron microscope (SEM) shows nanocrystalline morphology with well adherence and uniform distribution of grains over the surface of substrate in GS and PS mode, while amorphous morphology confirmed in PD mode. Optical absorbance study shows variation in absorbance peak due to quantum size effect. Hence, band gap of ZnSe thin films deposited by various modes of electrodeposition shows variation in range from 2.1 eV to 2.7 eV. The PEC cell combination was n-ZnSe | 1M (Na2S-NaOH-S) | Graphite. From the current-voltage (I-V) characteristics, it is concluded that films are of n-type conductivity. The I-V characteristics were used to calculate fill factor and to study performance of the PEC cells under the illumination condition of 1.5 air mass index (AM). PS mode deposited ZnSe thin film shows better performance with Isc and Voc values 1.16 mA/cm2 and 218 mV, respectively.

Nanostructured Zinc Selenide (ZnSe) Thin Films Deposited by Various Modes of Electrodeposition for Photovoltaic Application