Gallium (Ga)-doped zinc oxide (GZO) thin film is a promising alternative anode material to indium doped tin oxide (ITO) in organic light-emitting diode (OLED) applications. In this paper, ZnO:Ga transparent conducting oxide (TCO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering techniques. Variations of electrical, optical, and structural properties of GZO films with different substrate temperatures were investigated. Among different substrate temperatures, 200 ºC substrate temperature deposited film shows the lowest resistivity 2.45×10-4 Ω cm with an optical transmission of more than 90 %. Finally, GZO thin film was used as an anode material in OLED devices and was also compared with the ITO anode based OLED. The obtained GZO based OLED shows similar performance compared with ITO based OLED devices.