Characterization of Economic and Non-toxic Copper Doped Zinc Sulfide Thin Film Grown by Facile Chemical Bath Deposition Method

Nanasaheb P. Huse1,Email

Rohit M. Patil1

Ramphal Sharma2

1Department of Physics, G. T. Patil Arts, Commerce and Science College, Nandurbar-425412, Maharashtra, India.
2Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad-421004, Maharashtra, India.

 

Abstract

Herein, economic, non-toxic Copper doped Zinc sulfide (Cu-ZnS) thin film has been synthesized by facile chemical bath deposition (CBD) method at low temperature. The uniformly deposited thin films were characterized to study structural, optical, morphological, topographical and electrical properties. The X-ray diffraction (XRD) pattern shows distinct clear peaks that confirm crystalline nature along with the incorporation of copper into the ZnS lattice with an average crystallite size of ~27.69 nm. The morphological properties were studied by Field emission scanning electron microscopy (FE-SEM) which revealed uniform deposition over the entire surface of the substrate having spherical grains merged with one another making the surface porous at grain boundaries. A topographical study was carried out by using Atomic force microscopy (AFM), which is analogous to FESEM results. The 3-D AFM image shows a rough surface having Root Mean Square (RMS) roughness of 30.39 nm. The optical study show higher absorbance in the visible region results in a band gap of ~2.25 eV. I-V characteristics show ohmic nature and a sharp increase in photocurrent after light illumination which confirms the photosensitive nature of film. The calculated photosensitivity of ~87.7 % at 100 Watt light illumination, shows its promising candidature for optoelectronic devices.

Characterization of Economic and Non-toxic Copper Doped Zinc Sulfide Thin Film Grown by Facile Chemical Bath Deposition Method