Effect of Cu4SnS4 Layer Thickness on the Photovoltaic Parameters of Photoelectrochemical Solar Cells

H. D. Shelke1

A. A. Mohite2

A. P. Torane2

K. V. Madhale3

C. D. Lokhande4,Email

1Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune-411 007.
2Rayat Institute of Research and Development, Satara-415 001.
3Department of Physics, Walchand College of Engineering, Sangli-500-757.
4Centre for Interdisciplinary Research, D. Y. Patil Educational Society, Kolhapur-416 006.

 

Abstract

The composition Cu–Sn–S, Cu4SnSthin films have lucratively deposited via successive ionic layer adsorption and reaction (SILAR) process. An impression of width (thickness) on, surface nature, structural, band gap and photo electrochemical (PEC) nature of Cu4SnS4 absorber layer was explored. The XRD diffraction patterns indicated the presence of a strong (220) peak as the preferred orientation of orthorhombic crystal structure of Cu4SnS4 films. Raman investigation proves the establishment of Cu4SnS4 compound with phase pure. The SEM images revealed mostly large, smooth and compact nature observe considerable improvement in grain size with dipping cycles. The optical absorption spectra suggest that energy band gap decreases with increasing dipping cycles. Photovoltaic properties of Cu4SnS4 were examined by employing a PEC cell. The thickness of semiconducting Cu4SnS4 absorber were varied to examine its influence on all parameters of solar cell.

Effect of Cu4SnS4 Layer Thickness on the Photovoltaic Parameters of Photoelectrochemical Solar Cells