Copper Indium Disulfide Thin Films: Electrochemical Deposition and Properties

J. P. Sawant,1 

P. K. Bhujbal,2 

N. B.Choure,3 

R.B. Kale4 

H. M. Pathan2*Email

1Department of Physics, Mumbai University, Santacruz, Mumbai – 400098, India.

2Advanced Physics Laboratory, Department of Physics, Savitribai Phule Pune University, Pune- 411007.

3Electrochemical Laboratory, Department of Physics, Savitribai Phule Pune University, Pune- 411007.

4Department of Physics, The Institute of Science, Madam Cama Road, Mumbai – 400032.

*Email: [email protected] (H. M. Pathan)

Abstract

The electrochemical deposition method is an attractive technique to obtain a variety of thin films because of its advantages, such as low equipment cost and large-scale deposition. Different metal oxide, metal sulfide, chalcogenide thin films have been deposited and successfully employed in various optoelectronic devices. Among these, chalcopyrite copper indium disulfide (CIS) thin films are widely useful for the application in thin-film solar cells, photodetectors, and light-sensing transistors, etc. The row material requirement for fabrication of cells and low production cost makes it the top content for the manufacturing of optoelectronic devices. In a present review article, we have discussed the physical properties of CIS thin film deposited using the electrodeposition method. The preparative parameters, structural, optical, and electrical properties of the CIS thin films deposited using electrodeposition are discussed. Also, some strategies towards the enhancement of the quality of CIS thin film are discussed.

Copper Indium Disulfide Thin Films: Electrochemical Deposition and Properties