A room temperature chemical solution deposition technique has been employed for the deposition of Sb2Se3 thin films. Solution based deposition of Sb2Se3 crystals with variation in reaction time found to be playing a significant role in controlling the reaction rate during the deposition of Sb2Se3 films. Temporal evolution of structural, morphological and optical properties of deposited Sb2Se3 films were investigated using X-ray diffraction (XRD), scanning electron microscopy and UV-visible spectroscopy, respectively. Solution deposition of Sb2Se3 films involves two steps: initial nucleation and crystal formation followed by growth to form final films. Increased reaction time from 30 to 120 min, deposited films showed morphological evolution for Sb2Se3 nanocrystals from dense spheres to self-assembled flower-like morphology. In addition, optical energy band gap variation from 1.60 to 1.63 eV, suggest the possibility of crystal size optimization with energy band gap tunability of Sb2Se3 crystals in the visible region. This is also evident from the photoluminescence studies, which reveals the luminescence intensity variation with crystal size of Sb2Se3 as a function of deposition time. Optical and morphological response of Sb2Se3 crystals to the reaction conditions suggests it as a suitable and potential candidate for optoelectronic applications such as photovoltaic cells, electronic nano-devices, fuel cells etc.