Field Emission Characteristics of Double Walled TiO2 Nanotubes

Girish P. Patil,1, 2

Sachin R. Rondiya,4

Vivekanand S. Bagal,3

Sugam Shivhare,3

Russell W. Cross,4

Nelson Y. Dzade,4

Sandesh R. Jadkar5

Padmakar. G. Chavan1*Email

1Department of Physics, School of Physical Sciences, Kavayitri Bahinabai Chaudhari North Maharashtra University, Jalgaon – 425001

2The State Key Laboratory of Refractories and Metallurgy, Institute of Advance Materials and Nanotechnology, College of Materials and Metallurgy, Wuhan University of Science and Technology, Wuhan 430081, China.

3Department of Applied Sciences & Humanities, SVKM’s NMIMS, Mukesh Patel School of Technology Management and Engineering, Shirpur Campus, 425405, India.

4School of Chemistry, Cardiff University, Main Building, Park Place, Cardiff, CF10 3AT, Wales, United Kingdom

5Department of Physics, Savitribai Phule Pune University, Pune 411007, India


Double walled TiO2 nanotubes have been synthesized by two probe anodization method on highly pure Titanium (Ti) substrate. FESEM and XRD analyses revealed the morphological and structural properties of the as-synthesized double walled TiO2 nanotubes. Investigation of their field emission characteristics in a planar diode configuration at a base pressure of 1 x 10-8 mbar has been done. The turn-on field defined for the emission current density of 10 µA/cm2 is found to be 2.1 V/µm. As the field is increased further to 2.95 V/µm maximum, a current density of 890 µA/cm2 is achieved. Current-time (I-t) measurement at a preset value of 1 µA emission current for the duration of 3 h demonstrates a robust emission current stability. The observed low turn-on field and stable electron emission makes the double walled TiO2 nanotubes a suitable emitter for various electronics devices applications.

Field Emission Characteristics of Double Walled TiO2 Nanotubes