Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method

Sunil V. Barma,1

Sachin R. Rondiya,2

Yogesh A. Jadhav,1

Sagar B. Jathar,1

Ganesh K. Rahane,1

Avinash Rokade,1

Russell W. Cross,2

Mamta P. Nasane,1

Vijaya Jadkar,1

Nelson Y. Dzade2

Sandesh R. Jadkar3,*Email

1School of Energy Studies, Savitribai Phule Pune University, Pune 411007, India

2School of Chemistry, Cardiff University, Main Building, Park Place, Cardiff, CF10 3AT, Wales, UK

3Department of Physics, Savitribai Phule Pune University, Pune 411007, India

Abstract

In this study, we report the synthesis and characterization of CdSe nanocrystals (NCs) by facile hot injection (HI) method. The formation of CdSe NCs was confirmed by X-ray diffraction (XRD), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). The optical properties were analyzed by UV-visible and photoluminescence (PL) spectroscopy shows an excitonic peak at 617 nm in PL spectra corresponds to the band gap of ~ 2 eV favourable for optoelectronic device applications. The Photoelectrochemical (PEC) performance of CdSe thin film prepared by spin coating method demonstrates a rise of photocurrent density (Jsc = 0.081 µAcm-2) after illumination. The Mott-Schottky (MS) and electrochemical impedance spectroscopy (EIS) measurements were further carried out to understand intrinsic properties namely the type of conductivity, flat band potential, charge carrier density (ND), charge transfer resistance, and recombination lifetime. The n-type conductivity, the charge carrier density of ND = 1.292 x 1016 cm-3, and recombination lifetime of 32.4 µs suggest the ideal behaviour of CdSe NCs for device quality photoelectrodes.

Structural, Optoelectronic, and Photoelectrochemical Investigation of CdSe Nanocrystals Prepared by Hot Injection Method