Recent Advances in Resistive Switching Materials and Devices: From Memories to Memristors

Gang Liu1

Yu Chen 2, Email

Shuang Gao 1

Bin Zhang 2

Run-Wei Li 1, Email

Xiaodong Zhuang 3

1 Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences, Ningbo, 315201, China

2 Key Laboratory for Advanced Materials Institute of Applied Chemistry School of Chemistry and Molecular Engineering East China University of Science and Technology 130 Meilong Road, Shanghai 200237, China.

3 College of Chemistry and Chemical Engineering Shanghai Jiaotong University 800 Dongchuan Road, Shanghai 200240, China


Resistive switching devices have not only been considered as an emerging candidate for the next generation information storage technology, but also demonstrated great potential for in-memory computing systems with greatly enhanced computation capability. This review focuses on the recent advances in resistive materials and devices. We first describe the electric field-induced filamentary conduction model that accounts for the resistive switching behavior observed in inorganic materials, as well as the novel electric field-engineering strategy that is used to optimize the device structure and the memory performance. The alternative ways of using organic and hybrid materials to construct resistive switching devices are then illustrated. By tuning the charge transfer interaction and solid state electrochemical redox properties in small molecules, polymer, metal-organic framework and organic-inorganic hybrid perovskite materials, bistable and multibit memories, as well as the biomimicking memristors have been fabricated. Finally, we discuss the future development of the resistive switching materials and devices, aiming to clarifying the key issues that hinders its practical applications.

Recent Advances in Resistive Switching Materials and Devices: From Memories to Memristors