Resistive switching devices have not only been considered as an emerging candidate for the next generation information storage technology, but also demonstrated great potential for in-memory computing systems with greatly enhanced computation capability. This review focuses on the recent advances in resistive materials and devices. We first describe the electric field-induced filamentary conduction model that accounts for the resistive switching behavior observed in inorganic materials, as well as the novel electric field-engineering strategy that is used to optimize the device structure and the memory performance. The alternative ways of using organic and hybrid materials to construct resistive switching devices are then illustrated. By tuning the charge transfer interaction and solid state electrochemical redox properties in small molecules, polymer, metal-organic framework and organic-inorganic hybrid perovskite materials, bistable and multibit memories, as well as the biomimicking memristors have been fabricated. Finally, we discuss the future development of the resistive switching materials and devices, aiming to clarifying the key issues that hinders its practical applications.