Thickness Dependent Physical Properties of SILAR Deposited Nanostructured CoS Thin Films

A. V. Mitkari

A. U. Ubale Email

Nanostructured Thin Film Material Laboratory, Department of Physics, Govt. Vidarbha Institute of Science and Humanities, VMV Road, Amravati 444604, Maharashtra, India

Abstract

The preparation of nanostructured CoS thin films onto amorphous glass substrate by SILAR method is discussed. The characterization techniques such as X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Optical absorption and Electrical resistivity measurements were used to investigate size dependent physical properties of CoS thin films. The SILAR grown CoS material exhibits hexagonal structure .The electrical studies revealed that the resistivity and activation energy is found to be thickness dependent. The thermo-emf measurements confirmed that SILAR grown CoS films are of n-type.

Thickness Dependent Physical Properties of SILAR Deposited Nanostructured CoS Thin Films