Superior Thermal Dissipation in Graphene Electronic Device Through Novel Heat Path by Electron-Phonon Coupling

Ying Zhang 1, #

Yaping Yan 1, #

Jie Guo 1

Tingyu Lu 1, 2 

Jun Liu 2

Jun Zhou 1

Xiangfan Xu 1, 3, Email

Center for Phononics and Thermal Energy Science, China-EU Joint Center for Nanophononics, School of Physics Science and Engineering, Tongji University, 200092 Shanghai, China.

Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

Zhejiang Province Key Laboratory of Quantum Technology and Device, Zhejiang University, Hangzhou 310027, China

#These authors contributed equally to this work.

Abstract

Interfacial thermal resistance (ITR) plays an important role in thermal dissipation across different materials and it has been widely investigated in recent years. In this work, we measured the relative change of the ITR between metal and aluminum oxide treated with O2-plasma. Significant reduction of ITR is observed. The measured data shows that plasma treatment induces an order of magnitude decrease of ITR, which is mainly attributed to the direct electronphonon coupling across the interface. Scanning thermal microscopy technique measurement of graphene electronic devices on aluminum oxide gave direct evidence for heat dissipation applications by tuning the surface charge carries concentration.

Superior Thermal Dissipation in Graphene Electronic Device Through Novel Heat Path by Electron-Phonon Coupling