Structural, Morphological, Optical and Electrical Properties of Cu-Doped PbS Nanofilms

Rui Li1,2

Wei Li1,2, Email

Mengting Liu1,2

Qinyu He1,2

Yinzhen Wang1,2

Qiuqiang Zhan3 

Teng Wang4

1 Guangdong Engineering Technology Research Center of Efficient Green Energy and Environmental Protection Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou, 510006, China

2 Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Guangzhou 510006, China

3 Centre for Optical and Electromagnetic Research, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, 510006 Guangzhou, China

4 School of Computer, South China Normal University, Guangzhou 510006, China

Abstract

PbS nanofilms with different Cu doping concentrations (0, 1, 2, 3 and 4 at. %) were deposited. The effects of Cu concentration on the structural, morphological, optical and electrical properties of PbS nanofilms were studied. With the increasing dopant content, we find that the crystallite size decreases, the shape of crystal particles changes, the optical band gap increases, the resistivity and carrier concentration change non-monotonously. 2% Cu-doped PbS film has the optimum value of theoretical band gap for absorbing sunlight, and 3% Cu-doped PbS film has the lowest resistivity and the highest carrier concentration.

Structural, Morphological, Optical and Electrical Properties of Cu-Doped PbS Nanofilms