Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)

Zhiqiang Liu 1, 2,Email

Xiaoyan Yi 1, 2

Junxi Wang 1, 2

Ian Ferguson 4

Na Lu 3

Jinmin Li 1, 2

1 Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science, Beijing, 100086, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
3 Lyles School of Civil Engineering, Birck Nanotechnology Center, Sustainable Materials and Renewable Technology (SMART) Lab, Purdue University, West Lafayette, IN 47906 USA
4 Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla MO 65409, USA

Abstract

In this work, we clarify the underlying physics and the acceptor ionization process in the In-Mg co-doping GaN. The fundamental understandings are also applicable for other co-doping nitride systems. We show the effective acceptors ionization stems mainly from the band structure tuning effect of the 4d orbitals of In atoms. In addition, temperature dependent defect-related photoluminescence analysis was proposed to examine the energy position of Mg impurity levels, which is crucially important in the design for high p-doping. Finally, a hole concentration, which is nearly one order of magnitude higher than what is typically achievable by direct Mg-doping, was achieved.

Theoretical Analysis and Experimental Realization of Highly Effective Acceptor Ionization in GaN via Mg Co-doped with 4d-Element (In)