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Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

8. Vijaya Jadkar, Amit Pawbake, Ashok Jadhavar, Ravindra Waykar, Subhash Pandharkar, Ajinkya Bhorde, Rahul Aher, Shruthi Nair, Bharat Gabhale, Ashish Waghmare, Dhirsing Naik, Priti Vairale, Suresh Gosavi and Sandesh Jadkar, Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method, ES Mater. Manuf., 2019, 5, 57-64.

PDF online:esmm5f236.pdf


Abstract: In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon (nc-Si:H) thin films by hot wire method. The obtained thin films were characterized by using low angle-XRD, Raman spectroscopy, non-contact atomic force microscopy (NC-AFM) and UV-Visible spectroscopy. The low angle-XRD analysis revealed that the obtained nc-Si:H thin films are polycrystalline and have preferred orientation along (111) direction. Formation of nc-Si:H films are further confirmed by Raman spectroscopy analysis. The UV-Visible spectroscopy analysis showed that the synthesized films have sharp absorption edge in visible region and has direct band gap of  1. 94 eV. Finally, nc-Si:H based photo-detector have been prepared at optimized process parameters which show an excellent response time (1.79 s) and recovery time (1.71 s) along with responsivity ( 9.8x10-8 A/W), detectivity ( 5.5x104 Jones) and quantum efficiency ( 27.37x10-6 %). The obtained results demonstrate a significant step towards nc-Si:H based photo-detector for broadband photo-detection applications.

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